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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3371
DESCRIPTION *Collector-Emiiter Sustaining Voltage: VCEO(SUS)= 500V(Min.) *Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 8A *High Speed Switching
*
APPLICATIONS *Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
ww w
scs .i
VALUE 800 V 500 V 7 V 15 A 30 A 5 A
UNIT
.cn mi e
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
B
Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature
PC
200
W
Tj
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC3371
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.5A; L= 25mH
500
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 8A; IB= 1.6A
B
1.0
V
VBE(sat) ICBO IEBO
Base-Emitter Saturation Voltage
IC= 8A; IB= 1.6A
B
1.5
V
Collector Cutoff Current
VCB= 800V; IE= 0 VEB= 5V; IC= 0
0.1
mA
Emitter Cutoff Current
0.1
mA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
Switching Times; Resistive Load
ton ts tf
Turn-on Time
Storage Time
Fall Time
w w
scs .i w
IC= 8A; VCE= 5V
.cn mi e
15 10
1.0
s s s
IC= 8A; IB1= -IB2= 1.6A; VCC= 200V
3.0
1.0
isc Websitewww.iscsemi.cn


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